TSM019NH04CR RLG

Taiwan Semiconductor Corporation

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TSM019NH04CR RLG

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Package:

8-PDFNU (5x6)

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Description:

40V, 100A, SINGLE N-CHANNEL POWE

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	6029 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	89 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.9mOhm @ 50A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.6V @ 250µA
Supplier Device Package	8-PDFNU (5x6)
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	150W (Tc)
Series	PerFET™
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Taiwan Semiconductor Corporation
Current - Continuous Drain (Id) @ 25°C	35A (Ta), 100A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	7V, 10V
Package	Tape & Reel (TR)