TSM22P10CZ C0G

Taiwan Semiconductor Corporation

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TSM22P10CZ C0G

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Package:

TO-220

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Description:

MOSFET P-CH 100V 22A TO220

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	2250 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	42 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	140mOhm @ 20A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	TO-220
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	125W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Taiwan Semiconductor Corporation
Current - Continuous Drain (Id) @ 25°C	22A (Tc)
Vgs (Max)	±25V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk