TSM2N7000KCT A3G

Taiwan Semiconductor Corporation

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TSM2N7000KCT A3G

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TO-92

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Description:

MOSFET N-CHANNEL 60V 300MA TO92

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	60 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	0.4 nC @ 4.5 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	5Ohm @ 100mA, 10V
Product Status	Discontinued at Digi-Key
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	TO-92
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	400mW (Ta)
Series	-
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Technology	MOSFET (Metal Oxide)
Mfr	Taiwan Semiconductor Corporation
Current - Continuous Drain (Id) @ 25°C	300mA (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Package	Cut Tape (CT)
Base Product Number	TSM2N7000