TSM301K12CQ RFG

Taiwan Semiconductor Corporation

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TSM301K12CQ RFG

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Package:

6-TDFN (2x2)

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Description:

MOSFET P-CH 20V 4.5A 6TDFN

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	5.2 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	94mOhm @ 2.8A, 4.5V
Product Status	Not For New Designs
Vgs(th) (Max) @ Id	500mV @ 250µA (Min)
Supplier Device Package	6-TDFN (2x2)
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	6.5W (Tc)
Series	-
Package / Case	6-VDFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Mfr	Taiwan Semiconductor Corporation
Current - Continuous Drain (Id) @ 25°C	4.5A (Ta)
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	TSM301