TSM650P03CX

Taiwan Semiconductor Corporation

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TSM650P03CX

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Package:

SOT-23

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Description:

-30V, -4.1A, SINGLE P-CHANNEL PO

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	810 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	8 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	65mOhm @ 4A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	900mV @ 250µA
Supplier Device Package	SOT-23
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	1.56W (Tc)
Series	-
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Mfr	Taiwan Semiconductor Corporation
Current - Continuous Drain (Id) @ 25°C	4.1A (Tc)
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	TSM650