XP10NA011H

XSemi Corporation

Product No:

XP10NA011H

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Package:

TO-252

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Description:

MOSFET N-CH 100V 48.5A TO-251

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2288 pF @ 80 V
Gate Charge (Qg) (Max) @ Vgs	56 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	11mOhm @ 30A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-252
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	2W (Ta), 50W (Tc)
Series	XS10NA011
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	XSemi Corporation
Current - Continuous Drain (Id) @ 25°C	48.5A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)