XP10NA8R4IT

XSemi Corporation

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XP10NA8R4IT

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Package:

TO-220CFM

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Description:

MOSFET P-CH -100V -1.2A SOT-23

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3248 pF @ 80 V
Gate Charge (Qg) (Max) @ Vgs	67.2 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	8.4mOhm @ 24A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-220CFM
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	1.92W (Ta), 32W (Tc)
Series	XP10NA8R4
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Mfr	XSemi Corporation
Current - Continuous Drain (Id) @ 25°C	44A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube