XP60SL115DR

XSemi Corporation

Product No:

XP60SL115DR

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Package:

TO-262

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Description:

MOSFET N-CH 600V 7A TO-252

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	5120 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	145 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	115mOhm @ 9.6A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	TO-262
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	2W (Ta), 178W (Tc)
Series	XP60SL115D
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Mfr	XSemi Corporation
Current - Continuous Drain (Id) @ 25°C	28A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube