XP65AN1K2IT

XSemi Corporation

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XP65AN1K2IT

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Package:

TO-220CFM

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Description:

MOSFET N-CH 650V 20A TO-220CFM

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2048 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	44.8 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	1.2Ohm @ 3.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-220CFM
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	1.92W (Ta), 34.7W (Tc)
Series	XP65AN1K2
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Mfr	XSemi Corporation
Current - Continuous Drain (Id) @ 25°C	7A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube