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1SS403E,L3F

Toshiba Semiconductor and Storage

Product No:

1SS403E,L3F

Package:

ESC

Batch:

-

Datasheet:

-

Description:

DIODE GEN PURP 200V 100MA ESC

Quantity:

Delivery:

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Payment:

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Product Information

Parameter Info

User Guide

Speed Small Signal =< 200mA (Io), Any Speed
Capacitance @ Vr, F 3pF @ 0V, 1MHz
Reverse Recovery Time (trr) 60 ns
Mounting Type Surface Mount
Product Status Active
Supplier Device Package ESC
Current - Reverse Leakage @ Vr 1 µA @ 200 V
Series -
Package / Case SC-79, SOD-523
Technology Standard
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 100 mA
Mfr Toshiba Semiconductor and Storage
Voltage - DC Reverse (Vr) (Max) 200 V
Package Tape & Reel (TR)
Current - Average Rectified (Io) 100mA
Operating Temperature - Junction 150°C (Max)
Base Product Number 1SS403