BAS516,L3F

Toshiba Semiconductor and Storage

Product No:

BAS516,L3F

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Package:

ESC

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Description:

DIODE GEN PURP 100V 250MA ESC

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Speed	Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F	0.35pF @ 0V, 1MHz
Reverse Recovery Time (trr)	3 ns
Mounting Type	Surface Mount
Product Status	Active
Supplier Device Package	ESC
Current - Reverse Leakage @ Vr	200 nA @ 80 V
Series	-
Package / Case	SC-79, SOD-523
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.25 V @ 150 mA
Mfr	Toshiba Semiconductor and Storage
Voltage - DC Reverse (Vr) (Max)	100 V
Package	Tape & Reel (TR)
Current - Average Rectified (Io)	250mA
Operating Temperature - Junction	150°C (Max)
Base Product Number	BAS516