2N6847

International Rectifier

Product No:

2N6847

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Package:

TO-205AF (TO-39)

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Description:

POWER FIELD-EFFECT TRANSISTOR, P

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	8.4 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	1.725Ohm @ 2.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-205AF (TO-39)
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	20W (Tc)
Series	HEXFET®
Package / Case	TO-205AF Metal Can
Technology	MOSFET (Metal Oxide)
Mfr	International Rectifier
Current - Continuous Drain (Id) @ 25°C	2.5A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk