2SK1775-E

Renesas Electronics America Inc

Product No:

2SK1775-E

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Package:

TO-3P

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Description:

MOSFET N-CH 900V 8A TO3P

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1730 pF @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	1.6Ohm @ 4A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	-
Supplier Device Package	TO-3P
Drain to Source Voltage (Vdss)	900 V
Power Dissipation (Max)	60W (Tc)
Series	-
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Mfr	Renesas Electronics America Inc
Current - Continuous Drain (Id) @ 25°C	8A (Ta)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	2SK1775