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AS6004

ANBON SEMICONDUCTOR (INT'L) LIMITED

Product No:

AS6004

Package:

SOT-23-3L

Batch:

-

Datasheet:

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Description:

P-CHANNEL ENHANCEMENT MODE MOSFE

Quantity:

Delivery:

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Payment:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 930 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 120mOhm @ 4A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package SOT-23-3L
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 1.5W (Ta)
Series -
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Mfr ANBON SEMICONDUCTOR (INT'L) LIMITED
Current - Continuous Drain (Id) @ 25°C 4A (Ta)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)