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BSM300D12P3E005

Rohm Semiconductor

Product No:

BSM300D12P3E005

Manufacturer:

Rohm Semiconductor

Package:

Module

Batch:

-

Datasheet:

-

Description:

SILICON CARBIDE POWER MODULE. B

Quantity:

Delivery:

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Payment:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
Configuration 2 N-Channel (Half Bridge)
Input Capacitance (Ciss) (Max) @ Vds 14000pF @ 10V
Gate Charge (Qg) (Max) @ Vgs -
Mounting Type Chassis Mount
Rds On (Max) @ Id, Vgs -
Product Status Active
Vgs(th) (Max) @ Id 5.6V @ 91mA
Supplier Device Package Module
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Series -
Package / Case Module
Technology Silicon Carbide (SiC)
Power - Max 1260W (Tc)
Mfr Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C 300A (Tc)
Package Bulk
Base Product Number BSM300