BSM400D12P2G003

Rohm Semiconductor

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BSM400D12P2G003

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Module

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Description:

SILICON CARBIDE POWER MODULE. B

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
Configuration	2 N-Channel (Half Bridge)
Input Capacitance (Ciss) (Max) @ Vds	38000pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	-
Rds On (Max) @ Id, Vgs	-
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 85mA
Supplier Device Package	Module
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Series	-
Package / Case	Module
Technology	Silicon Carbide (SiC)
Power - Max	2450W (Tc)
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	400A (Tc)
Package	Bulk
Base Product Number	BSM400