Rohm Semiconductor
Product No:
BSM600D12P3G001
Manufacturer:
Package:
Module
Batch:
-
Datasheet:
-
Description:
1200V, 576A, HALF BRIDGE, FULL S
Quantity:
Delivery:
Payment:
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Operating Temperature | -40°C ~ 150°C (TJ) |
FET Feature | - |
Configuration | 2 N-Channel (Half Bridge) |
Input Capacitance (Ciss) (Max) @ Vds | 31000pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs | - |
Mounting Type | Chassis Mount |
Rds On (Max) @ Id, Vgs | - |
Product Status | Active |
Vgs(th) (Max) @ Id | 5.6V @ 182mA |
Supplier Device Package | Module |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Series | - |
Package / Case | Module |
Technology | Silicon Carbide (SiC) |
Power - Max | 2450W (Tc) |
Mfr | Rohm Semiconductor |
Current - Continuous Drain (Id) @ 25°C | 600A (Tc) |
Package | Bulk |
Base Product Number | BSM600 |