EPC2021ENGR

EPC

Product No:

EPC2021ENGR

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Die

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Description:

TRANS GAN 80V 60A BUMPED DIE

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1700 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2.5mOhm @ 29A, 5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.5V @ 14mA
Supplier Device Package	Die
Drain to Source Voltage (Vdss)	80 V
Power Dissipation (Max)	-
Series	eGaN®
Package / Case	Die
Technology	GaNFET (Gallium Nitride)
Mfr	EPC
Current - Continuous Drain (Id) @ 25°C	60A (Ta)
Vgs (Max)	+6V, -4V
Drive Voltage (Max Rds On, Min Rds On)	5V
Package	Cut Tape (CT)
Base Product Number	EPC20