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FCH76N60N

Fairchild Semiconductor

Product No:

FCH76N60N

Package:

TO-247

Batch:

-

Datasheet:

-

Description:

POWER FIELD-EFFECT TRANSISTOR, 7

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 12385 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 285 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 36mOhm @ 38A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-247
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 543W (Tc)
Series SupreMOS™
Package / Case TO-247-3
Technology MOSFET (Metal Oxide)
Mfr Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C 76A (Tc)
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk