FCMT080N65S3

onsemi

Product No:

FCMT080N65S3

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Package:

4-TDFN (8x8)

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Description:

MOSFET N-CH 650V 38A 4TDFN

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2765 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	71 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	80mOhm @ 19A, 10V
Product Status	Not For New Designs
Vgs(th) (Max) @ Id	4.5V @ 880µA
Supplier Device Package	4-TDFN (8x8)
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	260W (Tc)
Series	SuperFET® III
Package / Case	4-PowerTSFN
Technology	MOSFET (Metal Oxide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	38A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	FCMT080