FDB045AN08A0-F085C

onsemi

Product No:

FDB045AN08A0-F085C

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Package:

D²PAK-3 (TO-263-3)

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Description:

MOSFET

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	6600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	138 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	4.5mOhm @ 80A, 10V
Product Status	Last Time Buy
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	D²PAK-3 (TO-263-3)
Drain to Source Voltage (Vdss)	75 V
Power Dissipation (Max)	310W (Tc)
Series	-
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	19A (Ta), 90A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Bulk