FDC5614P-G

onsemi

Product No:

FDC5614P-G

Manufacturer:

Package:

SuperSOT™-6

Batch:

Datasheet:

Description:

MOSFET N-CH 60V SUPERSOT6

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	759 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	105mOhm @ 3A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	SuperSOT™-6
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	800mW (Ta)
Series	PowerTrench®
Package / Case	SOT-23-6 Thin, TSOT-23-6
Technology	MOSFET (Metal Oxide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	3A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	FDC5614