FDFM2N111

Fairchild Semiconductor

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FDFM2N111

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MicroFET 3x3mm

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Description:

MOSFET N-CH 20V 4A MICROFET

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Schottky Diode (Isolated)
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	273 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	3.8 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	100mOhm @ 4A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1.5V @ 250µA
Supplier Device Package	MicroFET 3x3mm
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	1.7W (Ta)
Series	PowerTrench®
Package / Case	6-WDFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	4A (Ta)
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Bulk