FDMC2512SDC

Fairchild Semiconductor

Product No:

FDMC2512SDC

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Package:

8-PQFN (3.3x3.3)

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Description:

POWER FIELD-EFFECT TRANSISTOR, 3

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4410 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs	68 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2mOhm @ 27A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 1mA
Supplier Device Package	8-PQFN (3.3x3.3)
Drain to Source Voltage (Vdss)	25 V
Power Dissipation (Max)	3W (Ta), 66W (Tc)
Series	PowerTrench®
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	32A (Ta), 40A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk