FDME910PZT

Fairchild Semiconductor

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FDME910PZT

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MicroFet 1.6x1.6 Thin

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SMALL SIGNAL FIELD-EFFECT TRANSI

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	2110 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	24mOhm @ 8A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1.5V @ 250µA
Supplier Device Package	MicroFet 1.6x1.6 Thin
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	2.1W (Ta)
Series	PowerTrench®
Package / Case	6-PowerUFDFN
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	8A (Ta)
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Bulk