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FDP032N08B-F102

Fairchild Semiconductor

Product No:

FDP032N08B-F102

Package:

TO-220-3

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 80V 120A TO220-3

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 10965 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs 144 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 3.3mOhm @ 100A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 250µA
Supplier Device Package TO-220-3
Drain to Source Voltage (Vdss) 80 V
Power Dissipation (Max) 263W (Tc)
Series PowerTrench®
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Mfr Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk