FDP2710_F085

Fairchild Semiconductor

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FDP2710_F085

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Package:

TO-220-3

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Description:

4A, 250V, 0.047OHM, N-CHANNEL ,

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	5690 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	101 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	47mOhm @ 50A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	TO-220-3
Drain to Source Voltage (Vdss)	250 V
Power Dissipation (Max)	403W (Tc)
Series	PowerTrench®
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	4A (Ta), 50A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk