FDR6580

onsemi

Product No:

FDR6580

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Package:

SuperSOT™-8

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Description:

MOSFET N-CH 20V 11.2A SUPERSOT8

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3829 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	48 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	9mOhm @ 11.2A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	1.5V @ 250µA
Supplier Device Package	SuperSOT™-8
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	1.8W (Ta)
Series	PowerTrench®
Package / Case	8-LSOP (0.130", 3.30mm Width)
Technology	MOSFET (Metal Oxide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	11.2A (Ta)
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	FDR65