FDZ209N

Fairchild Semiconductor

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FDZ209N

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12-BGA (2x2.5)

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Description:

MOSFET N-CH 60V 4A 12BGA

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	657 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	9 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	80mOhm @ 4A, 5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	12-BGA (2x2.5)
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	2W (Ta)
Series	PowerTrench®
Package / Case	12-WFBGA
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	4A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	5V
Package	Bulk