FQI4N80TU

Fairchild Semiconductor

Product No:

FQI4N80TU

Manufacturer:

Package:

I2PAK (TO-262)

Batch:

Datasheet:

Description:

MOSFET N-CH 800V 3.9A I2PAK

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	3.6Ohm @ 1.95A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	I2PAK (TO-262)
Drain to Source Voltage (Vdss)	800 V
Power Dissipation (Max)	3.13W (Ta), 130W (Tc)
Series	QFET®
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	3.9A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk