FQNL1N50BBU

Fairchild Semiconductor

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FQNL1N50BBU

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Package:

TO-92-3

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Description:

MOSFET N-CH 500V 270MA TO92-3

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	5.5 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	9Ohm @ 135mA, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	3.7V @ 250µA
Supplier Device Package	TO-92-3
Drain to Source Voltage (Vdss)	500 V
Power Dissipation (Max)	1.5W (Tc)
Series	QFET®
Package / Case	TO-226-3, TO-92-3 Long Body (Formed Leads)
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	270mA (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk