FQP19N10

onsemi

Product No:

FQP19N10

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Package:

TO-220-3

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Description:

MOSFET N-CH 100V 19A TO220-3

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	780 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	100mOhm @ 9.5A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-220-3
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	75W (Tc)
Series	QFET®
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	19A (Tc)
Vgs (Max)	±25V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	FQP1