FQT3P20TF_SB82100

Fairchild Semiconductor

Product No:

FQT3P20TF_SB82100

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Package:

SOT-223-4

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Description:

1-ELEMENT, P-CHANNEL POWER MOSFE

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	8 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2.7Ohm @ 335mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	SOT-223-4
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	2.5W (Tc)
Series	QFET®
Package / Case	TO-261-4, TO-261AA
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	670mA (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk