FQT4N20LTF

Fairchild Semiconductor

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FQT4N20LTF

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Package:

SOT-223-4

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Description:

POWER FIELD-EFFECT TRANSISTOR, 0

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	310 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	5.2 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.35Ohm @ 425mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 250µA
Supplier Device Package	SOT-223-4
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	2.2W (Tc)
Series	QFET®
Package / Case	TO-261-4, TO-261AA
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	850mA (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Package	Bulk