FQU10N20TU_AM002

onsemi

Product No:

FQU10N20TU_AM002

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Package:

I-PAK

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Description:

MOSFET N-CH 200V 7.6A IPAK

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Operating Temperature	-
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	360mOhm @ 3.8A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	I-PAK
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	2.5W (Ta), 51W (Tc)
Series	QFET®
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	7.6A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	FQU1