GAN041-650WSBQ

Nexperia USA Inc.

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GAN041-650WSBQ

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Package:

TO-247-3

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Description:

GAN041-650WSB/SOT429/TO-247

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1500 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	41mOhm @ 32A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 1mA
Supplier Device Package	TO-247-3
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	187W
Series	-
Package / Case	TO-247-3
Technology	GaNFET (Cascode Gallium Nitride FET)
Mfr	Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C	47.2A
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube