HN1B01FU-GR,LXHF

Toshiba Semiconductor and Storage

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HN1B01FU-GR,LXHF

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US6

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Description:

AUTO AEC-Q PNP + NPN TR VCEO:-50

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Operating Temperature	-
Frequency - Transition	120MHz, 150MHz
Current - Collector (Ic) (Max)	150mA
Vce Saturation (Max) @ Ib, Ic	300mV @ 10mA, 100mA / 250mV @ 10mA, 100mA
Mounting Type	Surface Mount
Product Status	Active
Voltage - Collector Emitter Breakdown (Max)	50V
Supplier Device Package	US6
Series	Automotive, AEC-Q101
Transistor Type	NPN, PNP
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max	200mW
Mfr	Toshiba Semiconductor and Storage
Current - Collector Cutoff (Max)	100nA (ICBO)
Package	Tape & Reel (TR)
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA, 6V
Base Product Number	HN1B01