HP8M31TB1

Rohm Semiconductor

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HP8M31TB1

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Package:

8-HSOP

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HP8M31TB1 IS LOW ON-RESISTANCE A

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Operating Temperature	150°C (TJ)
FET Feature	-
Configuration	N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds	470pF @ 30V, 2300pF @ 30V
Gate Charge (Qg) (Max) @ Vgs	12.3nC @ 10V, 38nC @ 10V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	65mOhm @ 8.5A, 10V, 70mOhm @ 8.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 1mA
Supplier Device Package	8-HSOP
Drain to Source Voltage (Vdss)	60V
Series	-
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Power - Max	3W (Ta)
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	8.5A (Ta)
Package	Tape & Reel (TR)
Base Product Number	HP8M31