HP8ME5TB1

Rohm Semiconductor

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HP8ME5TB1

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Package:

8-HSOP

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100V 8.5A, DUAL NCH+PCH, HSOP8,

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Operating Temperature	150°C (TJ)
FET Feature	Standard
Configuration	N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds	90pF @ 50V, 590pF @ 50V
Gate Charge (Qg) (Max) @ Vgs	2.9nC @ 10V, 19.7nC @ 10V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	193mOhm @ 3A, 10V, 273mOhm @ 3A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 1mA
Supplier Device Package	8-HSOP
Drain to Source Voltage (Vdss)	100V
Series	-
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Power - Max	3W (Ta), 20W (Tc)
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	3A (Ta), 8.5A (Tc), 3A (Ta), 8A (Tc)
Package	Tape & Reel (TR)