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HTNFET-T

Honeywell Aerospace

Product No:

HTNFET-T

Manufacturer:

Honeywell Aerospace

Package:

4-Power Tab

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 55V 4POWER TAB

Quantity:

Delivery:

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Payment:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 225°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 290 pF @ 28 V
Gate Charge (Qg) (Max) @ Vgs 4.3 nC @ 5 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 400mOhm @ 100mA, 5V
Product Status Active
Vgs(th) (Max) @ Id 2.4V @ 100µA
Supplier Device Package 4-Power Tab
Drain to Source Voltage (Vdss) 55 V
Power Dissipation (Max) 50W (Tj)
Series HTMOS™
Package / Case 4-SIP
Technology MOSFET (Metal Oxide)
Mfr Honeywell Aerospace
Current - Continuous Drain (Id) @ 25°C -
Vgs (Max) 10V
Drive Voltage (Max Rds On, Min Rds On) 5V
Package Bulk
Base Product Number HTNFET