HUF75531SK8T

Fairchild Semiconductor

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HUF75531SK8T

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Package:

8-SOIC

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Description:

MOSFET N-CH 80V 6A 8SOIC

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1210 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	82 nC @ 20 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	30mOhm @ 6A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	8-SOIC
Drain to Source Voltage (Vdss)	80 V
Power Dissipation (Max)	2.5W (Ta)
Series	UltraFET™
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	6A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk