IRF60DM206

International Rectifier

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IRF60DM206

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DirectFET™ Isometric ME

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Description:

IRF60 - 12V-300V N-CHANNEL POWER

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	6530 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	200 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2.9mOhm @ 80A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.7V @ 150µA
Supplier Device Package	DirectFET™ Isometric ME
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	96W (Tc)
Series	StrongIRFET™
Package / Case	DirectFET™ Isometric ME
Technology	MOSFET (Metal Oxide)
Mfr	International Rectifier
Current - Continuous Drain (Id) @ 25°C	130A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Bulk