IRF730

Harris Corporation

Product No:

IRF730

Manufacturer:

Package:

TO-220

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Description:

N-CHANNEL, MOSFET

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	530 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	1Ohm @ 3A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-220
Drain to Source Voltage (Vdss)	400 V
Power Dissipation (Max)	100W (Tc)
Series	PowerMESH™ II
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Harris Corporation
Current - Continuous Drain (Id) @ 25°C	5.5A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk
Base Product Number	IRF7