IRFS820B

Fairchild Semiconductor

Product No:

IRFS820B

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Package:

TO-220F-3

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Description:

N-CHANNEL POWER MOSFET

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	610 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	2.6Ohm @ 1.25A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-220F-3
Drain to Source Voltage (Vdss)	500 V
Power Dissipation (Max)	33W (Tc)
Series	-
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	2.5A (Tj)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk