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IRFU422

Harris Corporation

Product No:

IRFU422

Manufacturer:

Harris Corporation

Package:

I-PAK

Batch:

-

Datasheet:

-

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

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Payment:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 4Ohm @ 1.3A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package I-PAK
Drain to Source Voltage (Vdss) 500 V
Power Dissipation (Max) 50W (Tc)
Series -
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Technology MOSFET (Metal Oxide)
Mfr Harris Corporation
Current - Continuous Drain (Id) @ 25°C 2.2A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk