IRFU6215PBF

International Rectifier

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IRFU6215PBF

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IPAK (TO-251)

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Description:

AUTOMOTIVE HEXFET P-CHANNEL

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	66 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	295mOhm @ 6.6A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	IPAK (TO-251)
Drain to Source Voltage (Vdss)	150 V
Power Dissipation (Max)	110W (Tc)
Series	HEXFET®
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Mfr	International Rectifier
Current - Continuous Drain (Id) @ 25°C	13A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk