IRLR3636PBF

International Rectifier

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IRLR3636PBF

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D-Pak

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Description:

IRLR3636 - 12V-300V N-CHANNEL PO

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3779 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	49 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	6.8mOhm @ 50A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 100µA
Supplier Device Package	D-Pak
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	143W (Tc)
Series	HEXFET®
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	International Rectifier
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Vgs (Max)	±16V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk