IV1Q12160T4

Inventchip

Product No:

IV1Q12160T4

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Package:

TO-247-4

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Description:

SIC MOSFET, 1200V 160MOHM, TO-24

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	885 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs	43 nC @ 20 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	195mOhm @ 10A, 20V
Product Status	Active
Vgs(th) (Max) @ Id	2.9V @ 1.9mA
Supplier Device Package	TO-247-4
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	138W (Tc)
Series	-
Package / Case	TO-247-4
Technology	SiCFET (Silicon Carbide)
Mfr	Inventchip
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Vgs (Max)	+20V, -5V
Drive Voltage (Max Rds On, Min Rds On)	20V
Package	Tube