IXFQ10N80P

IXYS

Product No:

IXFQ10N80P

Manufacturer:

Package:

TO-3P

Batch:

Datasheet:

Description:

MOSFET N-CH 800V 10A TO3P

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	40 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	1.1Ohm @ 5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5.5V @ 2.5mA
Supplier Device Package	TO-3P
Drain to Source Voltage (Vdss)	800 V
Power Dissipation (Max)	300W (Tc)
Series	HiPerFET™, Polar
Package / Case	TO-3P-3, SC-65-3
Technology	MOSFET (Metal Oxide)
Mfr	IXYS
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXFQ10