IXTA1N100P

IXYS

Product No:

IXTA1N100P

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Package:

TO-263AA

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Description:

MOSFET N-CH 1000V 1A TO263

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	331 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	15.5 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	15Ohm @ 500mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 50µA
Supplier Device Package	TO-263AA
Drain to Source Voltage (Vdss)	1000 V
Power Dissipation (Max)	50W (Tc)
Series	Polar
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	IXYS
Current - Continuous Drain (Id) @ 25°C	1A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXTA1